电学特性
FEOL Electrical Characterization
In IC device manufacturing electrical characteristics of layers and films must be well controlled. Conventional contact test methods on monitor wafers, like the 4-point probe FSM offers, do no longer meet modern requirements. State of the art IC feature extremely thin, often only a few atomic layers of material. FSM's contactless RsL probe for sheet resistance and leakage as well as the non-destructive EOT probe for IC-CV measurements meet the challenge to characterize ultra shallow junctions and thin dielectric materials on production wafers.
FSM offers contact and non-contact electrical characterization metrology used in FEOL device making.
3DIC TSV and BWS TTV硅片表面形貌测量
Film Stress薄膜应力量测仪
FEOL Electrical Characterization 电学特性
Thin wafer metrology 晶圆测量学
Film Adhesion漆膜附着力测试
FSM offers contact and non-contact electrical characterization metrology used in FEOL device making.
电话：86-021-37018108
传真：86-021-57656381
邮箱：info@boyuesh.com
地址：上海市松江区莘砖公路518号松江高科技园区28幢301室
